unisonic technologies co., ltd ut7410 preliminary power mosfet 30v, 24a n-channel enhancement mode power mosfet ? description the utc ut7410 is an n-channel enhancement mosfet, it uses utc?s advanced technology to provide the customers with perfect r ds(on) and low gate charge. the utc ut7410 is suitable for load switch and dc-dc converters applications, etc. ? features * r ds(on) <24m ? @ v gs =10v, i d =8a r ds(on) <32m ? @ v gs =4.5v, i d =7a * low gate charge (typical 9.8nc) ? ordering information ordering number lead free halogen free package packing ut7410l-k08-3030-r ut7410g-k08-303 0-r dfn-8(33) tape reel ut7410l-k08-3030-r (1)packing type (2)package type (3)lead free (1) r: tape reel (2) k08-3030: dfn-8(33) (3) l: lead free, g: halogen free www.unisonic.com.tw 1 of 7 copyright ? 2013 unisonic technologies co., ltd qw-r502-902.b
ut7410 preliminary power mosfet ? pin configuration unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-902.b
ut7410 preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-902.b ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v t c =25c 24 a (note 2) t c =100c i d 15 a t a =25c 9.5 a continuous (note 1) t a =70c i dsm 7.7 a drain current pulsed (note 3) i dm 40 a t c =25c 20 w (note 2) t c =100c p d 8.3 w t a =25c 3.1 w power dissipation (note 1) t a =70c p dsm 2 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol min typ max unit t 10s 30 40 c/w junction to ambient (note 1) steady-state ja 60 75 c/w junction to case (note 2) steady-state jc 5 6 c/w notes: 1. the value of ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. 2. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limi t for cases where additional heatsinking is used. 3. repetitive rating, pulse width limited by junction temperature t j(max) =150c.
ut7410 preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-902.b ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a forward v gs =+20v, v ds =0v +100 na gate-source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.4 1.8 2.5 v v gs =10v, i d =8a 18 24 m ? static drain-source on-resistance r ds(on) v gs =4.5v, i d =7a 27 32 m ? forward transconductance g fs v ds =5v, i d =8a 30 s on state drain current i d(on) v gs =10v, v ds =5v 40 a dynamic parameters input capacitance c iss 550 pf output capacitance c oss 110 pf reverse transfer capacitance c rss v gs =0v, v ds =15v, f=1.0mhz 55 pf gate resistance r g v gs =0v, v ds =0v, f=1.0mhz 4 4.9 ? switching parameters 10v 9.8 nc total gate charge 4.5v q g 4.6 nc gate to source charge q gs 1.8 nc gate to drain charge q gd v gs =10v, v ds =15v, i d =8a 2.2 nc turn-on delay time t d(on) 5 ns rise time t r 3.2 ns turn-off delay time t d(off) 24 ns fall-time t f v gs =10v, v ds =15v, r l =2 ? , r gen =3 ? 6 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 1.7 a drain-source diode forward voltage v sd i s =1a, v gs =0v 0.75 1 v
ut7410 preliminary power mosfet ? test circuits and waveforms unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-902.b
ut7410 preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-902.b
ut7410 preliminary power mosfet utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-902.b
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